2SC5764 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC5764

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SC5764

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V(Min)

·Fast Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching regulators applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Collector Current-Peak

Total Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

400

V

8

V

7

A

14

A

2

W

30

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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