D1209 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

D1209

Silicon NPN Epitaxial/ Darlington

Hitachi -> Renesas Electronics 

2SD1209(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

60

V

60

V

7

V

1

A

2

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 60

—

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CEO

I EBO

hFE

VCE(sat)

—

—

—

—

4000 —

—

—

Base to emitter saturation

VBE(sat)

—

—

voltage

Note: 1. Pulse test

Max Unit

—

V

100 µA

100 µA

—

1.5 V

2.0 V

Test conditions

IC = 0.1 mA, IE = 0

VCE = 60 V, RBE = ∞

VEB = 7 V, IC = 0

VCE = 3 V, IC = 0.5 A*1

IC = 500 mA, IB = 0.5 mA*1

IC = 500 mA, IB = 0.5 mA*1

2

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