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Part Name
Description
D1209 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
D1209
Silicon NPN Epitaxial/ Darlington
Hitachi -> Renesas Electronics
D1209 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SD1209(K)
Typical Transfer Characteristics
10
V
CE
= 3 V
0.5
Ta = 25
°
C
Pulse
0.2
0.1
0.05
0.02
0.01
0.1 0.2
0.5 1.0 2
5 10
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
10
I
C
= 1000 I
B
5
Pulse
2
Ta = –25
°
C
1.0
0.5
25 75
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1.0
Collector Current I
C
(A)
Base to Emitter Saturation Voltage
vs. Collector Current
10
I
C
= 1000 I
B
5
Pulse
Ta = –25
°
C
2
1.0
25 75
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1.0
Collector Current I
C
(A)
4
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