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Part Name
Description
2SD1262 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1262
Silicon NPN triple diffusion planar type darlington Power Transistors
Panasonic Corporation
2SD1262 Datasheet PDF : 4 Pages
1
2
3
4
2SD1262, 2SD1262A
50
(1)
40
30
P
C
T
a
(1)T
C
=Ta
(2)With a 50
×
50
×
2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
20
10
(2)
(3)
0
0
40
80
120
160
Ambient temperature T
a
(
°
C)
I
C
V
CE
12
T
C
=25˚C
10
8
I
B
=4.0mA
3.5mA
3.0mA
6
2.5mA
2.0mA
1.5mA
4
1.0mA
0.5mA
2
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
V
CE(sat)
I
C
(1) I
C
/I
B
=250
10
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25˚C
(3)
(2)
(1)
1
0.1
0.01
0.1
1
10
Collector current I
C
(A)
V
CE(sat)
I
C
I
C
/I
B
=500
10
T
C
=100˚C
25˚C
–25˚C
1
0.1
V
BE(sat)
I
C
I
C
/I
B
=500
10
T
C
=–25˚C
25˚C
1
100˚C
0.1
h
FE
I
C
10
5
V
CE
=3V
T
C
=100˚C
10
4
25˚C
–25˚C
10
3
10
2
0.01
0.1
1
10
Collector current I
C
(A)
0.01
0.1
1
10
Collector current I
C
(A)
10
0.1
1
10
100
Collector current I
C
(A)
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
I
CP
10
I
C
t=300ms
1
t=10ms
t=1ms
0.1
0.01
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
R
th
t
10
3
(1)Without heat sink
(2)With a 50
×
50
×
2mm Al heat sink
10
2
(1)
(2)
10
1
10
−
1
10
−
2
10
−
4
10
−
3
10
−
2
10
−
1
1
10
10
2
10
3
10
4
Time t (s)
2
SJD00178BED
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