D1548 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D1548

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=8A ;IB=2A

VBEsat Base-emitter saturation voltage

IC=8A ;IB=2A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=2A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

tf

Fall time

ICP=7A ;IB1(end)=1.5A

Product Specification

2SD1548

MIN TYP. MAX UNIT

5.0

V

1.6

V

10

μA

1

mA

8

3

MHz

165

pF

1.0

μs

2

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