2SD1604 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1604

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1604

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 8mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 80mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 4A; IB=B 8mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 8A; IB=B 80mA

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

ICEO

Collector Cutoff Current

VCE= 50V; RBE= ∞

hFE

DC Current Gain

IC= 4A; VCE= 3V

VECF

C-E Diode Forward Voltage

IF= 8A

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 4A, IB1= -IB2= 8mA

MIN TYP. MAX UNIT

80

V

7

V

1.5

V

3.0

V

2.0

V

3.5

V

100 μA

10

μA

1000

20000

3.0

V

0.5

μs

5.0

μs

1.0

μs

isc Website：www.iscsemi.cn

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