D1730 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1730 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1730
DESCRIPTION
·High Voltage
·High Switching Speed
·Built-in damper diode
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
www.iscsemi.cn PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
VALUE UNIT
1500
V
1500
V
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
15
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
2
A
100
W
150
℃
Tstg
Storage Temperature Range
-55-150 ℃
isc Website：www.iscsemi.cn
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