D1730 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D1730

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1730

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 500mA; IC= 0

7

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1A

8.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB=B 1A

1.5

V

hFE

DC Current Gain

IC= 1A; VCE= 5V

5

25

VCB= 750V; IE= 0

ICBO

Collector Cutoff Current

VCB= 1500V; IE= 0

www.iscsemi.cn VECF

C-E Diode Forward Voltage

IF= 5A

fT

Transition Frequency

IC= 1A; VCE= 10V

2

Switching Times, Resistive Load

ts

Storage Time

1.5

IC= 4A; IB1= 0.8A; IB2= -1.6A,

VCC= 200V

tf

Fall Time

0.2

10 μA

1.0 mA

2.3

V

MHz

μs

μs

isc Website：www.iscsemi.cn

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