D1736 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D1736

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1736

DESCRIPTION

·High Voltage

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCES

Collector-Emitter Voltage

1500

V

VCEO

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

2.5

A

ICP

Collector Current-Peak

7

A

IBB

Base Current- Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

1

A

60

W

150

℃

-55-150 ℃

isc Website：www.iscsemi.cn

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