D1739 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1739 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1739
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1.2A
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
Switching times
tstg
Storage time
tf
Fall time
IC=5A; IB1=1A
IB2=-2A; VCC=200V
MIN TYP. MAX UNIT
8.0
V
1.5
V
7
V
10
μA
1
mA
10
μA
6
30
2
MHz
1.5
μs
0.2
μs
2
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