2SD1850 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1850 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1850
DESCRIPTION
·High Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak
20
A
IBB
Base Current- Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
3
A
3
W
120
150
℃
-55-150 ℃
isc Website：www.iscsemi.cn
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