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Part Name
Description
2SD2019 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SD2019
Silicon NPN Epitaxial
Hitachi -> Renesas Electronics
2SD2019 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Maximum Collector Dissipation Curve
12
8
4
0
50
100
150
Case temperature T
C
(
°
C)
Transient Thermal Resistance
10
10 ms to 10 s
3
1.0
10
µ
s to 10 ms
0.3
0.1
0.01
0.01
0.1
1.0
0.1
1.0
Time t
10 (s)
10 (ms)
2SD2019
Area of Safe Operation
10
i
C (peak)
3
I
C (max)
1.0
0.3
0.1
0.03
Ta = 25
°
C
1 shot pulse
0.01
1
3
10
30
100
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
2.0
180
200
160
1.6
140
120
100
1.2
80
0.8
60
µ
A
0.4
Ta = 25
°
C
I
B
= 0
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
3
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