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Part Name
Description
D2101 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
D2101
Silicon NPN Triple Diffused
Hitachi -> Renesas Electronics
D2101 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
Typical Output Characteristics
10
T
C
= 25
°
C
1.8
8
1.6
1.4
1.2
6
2.0
1.0
0.8
4
0.6
0.4 mA
2
I
B
= 0
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
2SD2101
Area of Safe Operation
20
10
5
i
C (peak)
2
I
C (max)
1.0
0.5
0.2
0.1
0.05
Ta = 25
°
C
1 Shot Pulse
0.02
1
3
10 30 100 300
Collector to emitter voltage V
CE
(V)
10,000
3,000
1,000
DC Current Transfer Ratio
vs. Collector Current
=
75
°
C
T
C
–25
°
C
300
25
°
C
100
V
CE
= 3 V
30
10
0.1 0.3 1.0 3
10 30 100
Collector current I
C
(A)
3
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