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Part Name
Description
2SD2052 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD2052
Silicon NPN Power Transistors
Inchange Semiconductor
2SD2052 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CE
(sat)
Collector-emitter saturation voltage I
C
=7A; I
B
=0.7A
V
BE
Base-emitter on voltage
I
C
=7A;V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=150V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=3V; I
C
=0
h
FE-1
DC current gain
I
C
=20mA ; V
CE
=5V
h
FE-2
DC current gain
I
C
=1A ; V
CE
=5V
h
FE-3
DC current gain
I
C
=7A ; V
CE
=5V
f
T
Transition frequency
I
C
=0.5A ; V
CE
=5V,f=1MHz
C
OB
Collector output capacitance
f=1MHz; I
E
=0;V
CB
=10V
h
FE-2
Classifications
Q
S
60-120
80-160
P
100-200
Product Specification
2SD2052
MIN TYP. MAX UNIT
2.0
V
1.8
V
50
μ
A
50
μ
A
20
60
200
15
20
MHz
150
pF
2
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