D2053 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D2053 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2053
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
150
V
VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A
2.0
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A;VCE=5V
VCB=150V; IE=0
VEB=5V; IC=0
1.8
V
50
μA
50
μA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
60
200
hFE-3
fT
COB
固IN电C半H导AN体GE SEMICONDUTOR DC current gain
Transition frequency
Collector output capacitance
IC=7A ; VCE=5V
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
15
20
150
MHz
pF
hFE-2 Classifications
Q
P
60-120
100-200
2
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