D2057 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D2057

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2057

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage

IE=500mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A

8.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

hFE-1

DC current gain

IC=5A; IB=1.2A

VCB=1000V; IE=0

VCB=1500V; IE=0

IC=1A ; VCE=5V

1.5

V

30

μA

0.3 mA

8

hFE-2

DC current gain

IC=5A ; VCE=10V

4.5

15

fT

Transition frequency

IC=1A ; VCE=10V;f=0.5MHz

2

MHz

VF

Diode forward voltage

ts

Storage time

tf

Fall time

IC=-6A ;IB=0

IC=5A;IB1=-IB2=1.2A;LLeak=5μH

-2.3

V

12

μs

0.8 μs

2

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