D2059 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D2059 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2059
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1367
·Low collector saturation voltage:
VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A
·Collector power dissipation:
PC=30W(TC=25℃)
APPLICATIONS
·With general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Fig.1 simplified outline (TO-220F) and symbol
3
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
Open emitter
VALUE
100
UNIT
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
IB
Base current
0.5
A
PC
Collector dissipation
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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