D2059 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D2059 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2059
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
100
V
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
2.0
V
VBE
Base-emitter on voltage
IC=1A;VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=100V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
40
240
hFE-2
DC current gain
IC=4A ; VCE=5V
20
fT
Transition frequency
IC=1A ; VCE=5V
12
MHz
COB
Collector output capacitance
f=1MHz;VCB=10V
100
固IN电C半H导AN体GE SEMICONDUTOR hFE-1 Classifications
R
O
40-80
70-140
Y
120-240
pF
2
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