D2057 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

D2057

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2057

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=500mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A

VBEsat

Base-emitter saturation voltage

IC=5A; IB=1.2A

ICBO

Collector cut-off current

VCB=1000V; IE=0

VCB=1500V; IE=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=10V

fT

Transition frequency

IC=1A ; VCE=10V;f=0.5MHz

VF

Diode forward voltage

IC=-6A ;IB=0

ts

Storage time

tf

Fall time

IC=5A;IB1=-IB2=1.2A;LLeak=5µH

MIN TYP. MAX UNIT

7

V

8.0

V

1.5

V

30

µA

0.3

mA

8

4.5

15

2

MHz

-2.3

V

12

µs

0.8

µs

2

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