2SD2598 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD2598 Datasheet PDF : 3 Pages
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Transistors
2SD2598
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer
• A shunt resistor is omitted from the driver.
• M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
0.7 4.0
0.65 max.
Unit: mm
2.5±0.1
(0.8)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
750
mA
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
0.45+–00..0150
1.05±0.05
0.45+–00..0150
2.5±0.5
2.5±0.5
123
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 500 mA
IC = 500 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
60
50
5
4 000
100
100
20 000
2.5
3.0
200
V
V
V
nA
nA
V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Publication date: February 2003
SJC00269BED
1
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