D2335 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D2335

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA , IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A

VBEsat Base-emitter saturation voltage

IC=6A; IB=1.2A

ICBO

Collector cut-off current

VCB=800V IE=0

hFE

DC current gain

IC=1A ; VCE=5V

VF

Diode forward voltage

IF=6A

Product Specification

2SD2335

MIN TYP. MAX UNIT

600

V

5

V

5.0

V

1.5

V

10 μA

8

2.0

V

2

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