2SD425 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD425 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD425 2SD426
DESCRIPTION
·With TO-3 package
·Complement to type 2SB555/556
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD425
2SD426
Open emitter
VALUE
140
120
UNIT
V
2SD425
140
VCEO
Collector-emitter voltage
Open base
V
2SD426
120
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IE
Emitter current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
12
A
100
W
150
℃
-65~150
℃
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