INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD427
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High Power Dissipation-
: PC= 80W(Max)@TC=25℃
·Complement to Type 2SB557
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency
amplifier output stage.
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
-8
A
80
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc Website:www.iscsemi.cn