INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD845
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 150V(Min)
·Good Linearity of hFE
·Complement to Type 2SB755
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-12
A
120
W
150
℃
-55~150
℃
isc website:www.iscsemi.cn
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