2SJ358 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SJ358 Datasheet PDF : 6 Pages
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ELECTRICAL SPECIFICATIONS (Ta = +25 ˚C)
Parameter
Drain Shut-down Current
Gate Leak Current
Gate Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
IDSS
VDS = –60 V, VGS = 0
IGSS
VGS = –16/+10 V, VDS = 0
VGS(off)
VDS = –10 V, ID = –1 mA
|yfs|
VDS = –10 V, ID = –1.0 A
Drain-Source On-Resistance
Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Feedback Capacitance
On-Time Delay
Rise Time
Off-Time Delay
Fall Time
Gate Input Charge
Gate-Source Chanrge
Gate-Drain Charge
Internal Diode Reverse
Recovery Time
Internal Diode Reverse
Recovery Charge
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
trr
Qrr
VGS = –4 V, ID = –1.5 A
VGS = –10 V, ID = –1.5 A
VDS = –10 V, VGS = 0,
f = 1.0 MHz
VDD = –25 V, ID = –1.5 A
VGS(on) = –10 V
RG = 10 Ω, RL = 17 Ω
VDS = –48 V,
VGS = –10 V,
ID = –3.1 A, IG = –2 mA
IF = 3.0 A
di/dt = 50 A/µs
2SJ358
MIN.
–1.0
1.8
TYP.
–1.4
0.29
0.18
600
300
120
6
35
155
95
23.9
1.5
8.1
95
MAX.
–10
–/+10
–2.0
0.40
0.30
Unit
µA
µA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ns
118
nC
CHARACTERISTICS CURVES (Ta = +25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
25 50 75 100 125 150
Ta – Ambient Temperature – ˚C
FORWARD BIAS SAFE OPERATING AREA
–10
–5
–2
1 ms
10 ms
PW
–1
–0.5
= 100 ms
DS
–0.2
–0.1
–0.05 Single Pulse
–0.5 –1 –2
–5 –10 –20 –50 –100
VDS – Drain to Source Voltage – V
2
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