2SJ438(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ438 Datasheet PDF : 6 Pages
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2SJ438
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ438
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.0 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−60
V
−60
V
±20
V
−5
A
−20
A
25
W
273
mJ
−5
A
2
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
5.0
°C / W
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-02
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