Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±6.5 V, VDS = 0 V
VDS = −16 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = −10 V, ID = −200 μA
VGS = −2.5 V, ID = −0.5 A
VGS = −4 V, ID = −1 A
VDS = −10 V, ID = −1 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
2SJ465
Min Typ. Max Unit
—
—
±10
μA
—
— −100 μA
−16 —
—
V
−0.5 —
−1.1
V
— 0.82 1.0
Ω
— 0.54 0.71
0.8 1.7
—
S
— 270 —
—
25
—
pF
— 115 —
— 200 —
Turn−on time
ton
Switching time
Fall time
tf
— 250 —
ns
— 200 —
Turn−off time
Total gate charge
(Gate−source plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ −16 V, VGS = −5 V, ID = −2 A
Qgd
— 500 —
—
5
—
—
3.2
—
nC
—
1.8
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
—
—
IDR = −2 A, VGS = 0 V
IDR = −2 A, VGS = 0 V
dIDR / dt = 50 A / μs
Min Typ. Max Unit
—
—
−2
A
—
—
−6
A
—
—
1.7
V
— 130 —
ns
— 0.13 —
μC
Marking
Z9
Lot No.
Note 4: A line to the right of a Lot No. identifies the indication of
Part No.
product Labels.
(or abbreviation code)
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-12-10