2SJ361 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ361 Datasheet PDF : 9 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I D = –1 A
–0.2
–0.5 A
–0.1
–0.2 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
2SJ361
Static Drain to Source on State Resistance
vs. Drain Current
5
3 Pulse Test
1
–2.5 V
–4 V
0.3
VGS = –10 V
0.1
–0.1 –0.3
–1
–3
–10
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
–1 A
1.2
VGS = –2.5 V
–0.5 A
–0.2 A
0.8
–4 V
–0.5 A
–1 A –0.2 A
–1 A
0.4
–0.5 A
I D = –0.2 A
0
–10 V
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
1
0.3 Tc = –25 °C
25 °C
75 °C
0.1
0.3
0.01
–0.1
V DS = –10 V
Pulse Test
–0.3
–1
–3
–10
Drain Current I D (A)
5
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