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Part Name
Description
2SJ361 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ361
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ361 Datasheet PDF : 9 Pages
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2SJ361
3000
Body–Drain Diode Reverse
Recovery Time
1000
di/dt = 20 A/µs
V
GS
= 0, Ta = 25 °C
300
100
–0.1 –0.3
–1
–3
–10
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
500
300
Coss
100
V
GS
= 0
30
f = 1 MHz
10
Ciss
3
1
Crss
0.3
0.1
0
–4
–8 –12 –16 –20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DS
–20
–4
V
DD
= –10 V
–20 V
–40
–8
I
D
= –2 A
–60
–12
V
DD
= –10 V
–80
V
GS
–20 V
–16
–100
0
0.4 0.8 1.2 1.6
Gate Charge Qg (nc)
–20
2.0
Switching Characteristics
20
t
d(off)
10
tf
3
tr
1
t
d(on)
0.3
V
GS
= –10 V
V
DD
= –10 V
PW = 30 µs
duty < 1 %
0.1
–0.1 –0.3
–1
–3
–10
Drain Current I
D
(A)
6
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