DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SJ361 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
2SJ361
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SJ361 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SJ361
3000
Body–Drain Diode Reverse
Recovery Time
1000
di/dt = 20 A/µs
VGS = 0, Ta = 25 °C
300
100
–0.1 –0.3
–1
–3
–10
Reverse Drain Current I DR (A)
Typical Capacitance vs.
Drain to Source Voltage
500
300
Coss
100
VGS = 0
30 f = 1 MHz
10
Ciss
3
1
Crss
0.3
0.1
0
–4
–8 –12 –16 –20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DS
–20
–4
VDD= –10 V
–20 V
–40
–8
I D = –2 A
–60
–12
VDD= –10 V
–80 V GS
–20 V
–16
–100
0
0.4 0.8 1.2 1.6
Gate Charge Qg (nc)
–20
2.0
Switching Characteristics
20
t d(off)
10
tf
3
tr
1
t d(on)
0.3
VGS = –10 V
VDD = –10 V
PW = 30 µs
duty < 1 %
0.1
–0.1 –0.3
–1
–3
–10
Drain Current I D (A)
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]