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Part Name
Description
2SJ450 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SJ450
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ450 Datasheet PDF : 9 Pages
1
2
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5
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9
2SJ450
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Drain peak current
Channel dissipation
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
–60
±
20
–1
–2
–1
1
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW
≤
100
µ
s, duty cycle
≤
10%
2. When using aluminium ceramic board (12.5
×
20
×
70 mm)
Unit
V
V
A
A
A
W
°
C
°
C
2
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