2SJ450 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SJ450

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ450

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

–60

Gate to source breakdown

voltage

V(BR)GSS

±20

Zero gate voltage drain current IDSS

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–0.5

—

Static drain to source on state RDS(on)

—

resistance

Fowerd transfer admittance |yfs|

0.6

Typ

—

—

—

—

—

0.85

1.1

1.0

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse Test

Marking is "UY".

150

72

24

6

9

50

35

–0.9

100

Max

—

—

–50

±10

–1.5

1.2

1.9

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = –50 V, VGS = 0

VGS = ±16 V, VDS = 0

VDS = –10 V, ID = –1 mA

ID = –0.5 A

VGS = –4 V*1

ID = –0.3 A

VGS = –2.5 V*1

ID = –0.5 A

VDS = –10 V

VDS = –10 V

VGS = 0

f = 1 MHz

VGS = –10 V, ID = –0.5 A

RL = 60 Ω

IF = –1 A, VGS = 0

IF = –1 A, VGS = 0

diF/dt = 50A/µs

3

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