2SJ452 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SJ452

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ452

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Marking is "ZM–".

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

Pch

Tch

Tstg

Ratings

Unit

–50

V

±20

V

–0.2

A

–0.4

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

–50

Gate to source breakdown

voltage

V(BR)GSS

±20

Zero gate voltage drain current IDSS

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)1

resistance

—

—

–0.5

—

Static drain to source on state RDS(on)2 —

resistance

Foward transfer admittance |yfs|

0.1

Typ

—

—

—

—

—

5.0

7.5

0.19

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

Rise time

Turn-off delay tiem

Fall time

Note: 1. Pulse Test

t d(on)

—

tr

—

t d(off)

—

tf

—

1.1

15.7

0.12

0.45

1.3

8.4

5.6

Max

—

—

–1.0

±2.0

–1.5

7.0

12.0

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

µs

µs

µs

µs

Test conditions

ID = –100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = –40 V, VGS = 0

VGS = ±16 V, VDS = 0

ID = –10 µA, VDS = –5 V

ID = –100 mA

VGS = –4 V*1

ID = –40 mA

VGS = –2.5 V*1

ID = –100 mA*1

VDS = –10 V

VDS = –10 V

VGS = 0

f = 1 MHz

VGS = –10 V, ID = –0.1 A

RL = 300 Ω

2

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