2SJ599 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
2SJ599 Datasheet PDF : 9 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low input capacitance:
Ciss = 1300 pF TYP. (VDS = –10 V, VGS = 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251 (MP-3)
2SJ599-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VDSS
–60
V
VGSS
m20
V
ID(DC)
m20
A
ID(pulse)
m50
A
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS
–20
A
EAS
40
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14644EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2000, 2001
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