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Part Name
Description
2SJ567(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ567
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
Toshiba
2SJ567 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ567
3
1
Duty
=
0.5
05
03
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
0.01
0.005
0.003
0.001
10
m
100
m
r
th
– t
w
Single pulse
1m
10 m
100 m
Pulse width t
w
(S)
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
1
10
100
Safe operating area
-
30
ID max (pulse)
*
-
10
-
5
-
3
1 ms
*
100
m
s
*
-
1
-
0 5
-
0 3
DC
operation
-
0.1
-
0.05
*
Single nonrepetitive pulse
-
0.03 Tc
=
25°C
Curves must be derated
-
0.01
linearly with increase in
temperature.
-
0 005
-
0.1
-
0 3
-
1
-
3
-
10
VDSS max
-
30
-
100
-
300
Drain-source voltage V
DS
(V)
100
80
60
40
20
0
25
E
AS
– T
ch
50
75
100
125
150
Channel temperature Tch (°C)
15 V
-
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
W
V
DD
= -
50 V, L
=
25.2 mH
Waveform
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-08-12
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