K1062 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
K1062 Datasheet PDF : 5 Pages
| |||
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
⎪Yfs⎪
RDS (ON)
VDS (ON)
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 mA
ID = 50 mA, VGS = 10 V
ID = 50 mA, VGS = 10 V
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
tr
Turn-on time
ton
Switching time
Fall time
tf
2SK1062
Min Typ. Max Unit
⎯
⎯ ±100 nA
⎯
⎯
10
μA
60
⎯
⎯
V
2
⎯
3.5
V
100 ⎯
⎯
mS
⎯
0.6 1.0
Ω
⎯
30
50
mV
⎯
55
65
pF
⎯
13
18
pF
⎯
40
50
pF
⎯
8
⎯
⎯
14
⎯
ns
⎯
35
⎯
Turn-off Time
toff
VIN: tr, tf < 5 ns
D.U <= 1% (Zout = 50 Ω)
⎯
75
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
2
2007-11-01
Share Link: 