2SJ539 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SJ539

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ539

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.16 Ω typ.

• Low drive current

• 4 V gete drive devices

• High speed switching

Outline

ADE-208-657A (Z)

2nd. Edition

Jun 1998

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