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Part Name
Description
2SJ619(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ619
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
2SJ619 Datasheet PDF : 0 Pages
I
D
– V
DS
-
5
Common source
Tc
=
25°C
-
10
-
6
-
4
-
3
pulse test
-
4
-
8
-
3
-
2.5
-
2
-
1
VGS
= -
2 V
0
0
-
0.4
-
0.8
-
1.2
-
1.6
-
2.0
Drain-source voltage V
DS
(V)
-
10
Common source
VDS
= -
10 V
pulse test
-
8
-
6
I
D
– V
GS
25
-
4
-
2
100
Tc
= -
55°C
0
0
-
1
-
2
-
3
-
4
-
5
-
6
Gate-source voltage V
GS
(V)
2SJ619
-
20
-
16
-
12
-
8
-
4
0
0
-
8
-
10
I
D
– V
DS
-
6
Common source
Tc
=
25°C
pulse test
-
4
-
3.5
-
3
-
2.5
VGS
= -
2 V
-
2
-
4
-
6
-
8
-
10
Drain-source voltage V
DS
(V)
V
DS
– V
GS
Common source
-
3.2
Tc
=
25°C
pulse test
-
2.4
-
1.6
-
0.8
0
0
ID
= -
8 A
-
4
-
2
-
4
-
8
-
12
-
16
-
20
Gate-source voltage V
GS
(V)
ï
Y
fs
ï -
I
D
50
Common source
30
VDS
= -
10 V
Pulse test
10
Tc
= -
55°C
25
5
100
3
1
-
0.3
-
1
-
3
-
10
-
30
Drain current I
D
(A)
3.0
Common source
Tc
=
25°C
Pulse test
1.0
R
DS (ON)
-
I
D
0.5
0.3
VGS
= -
4 V
-
10
0.1
0.05
0.03
-
0.1
-
0.3
-
1
-
3
Drain current I
D
(A)
-
10
-
20
3
2002-08-09
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