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Part Name
Description
2SJ619(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ619
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
2SJ619 Datasheet PDF : 0 Pages
2SJ619
r
th
-
t
w
10
3
1
Duty
=
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
Single pulse
0.01
10
m
100
m
1m
10 m
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
1.67°C/W
100 m
1
10
Pulse width t
w
(S)
-
1000
Safe operating area
-
100
ID max (pulsed)
*
100
m
s
*
ID max (continuous)
-
10
1 ms
*
DC operation
Tc
=
25°C
-
1
*
: Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
-
0.1
-
0.1
-
1
VDSS max
-
10
-
100
Drain-source voltage V
DS
(V)
-
1000
E
AS
– T
ch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
-
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
W
V
DD
= -
25 V, L
=
1.84 mH
Wave form
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-08-09
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