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2SJ619 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SJ619 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
2SJ619
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = −100 V, VGS = 0 V
ID = −10 mA, VGS = 0 V
VDS = −10 V, ID = −1 mA
VGS = −4 V, ID = −6 A
VGS = −10 V, ID = −6 A
VDS = −10 V, ID = −6 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
±10
μA
100 μA
100
V
0.8
2.0
V
0.25 0.32
Ω
0.15 0.21
4.5 7.7
S
1100
210
pF
440
tr
0V
VGS
10 V
ton
18
ID = −8 A
VOUT
30
RL = 6.25 Ω
ns
tf
18
Duty <= 1%, tw = 10 μs VDD ∼− 50 V
toff
65
Qg
48
Qgs
VDD ∼− 80 V, VGS = −10 V, ID = −16 A
29
nC
Qgd
19
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = −16 A, VGS = 0 V
IDR = −16 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
16
A
64
A
1.7
V
160
μs
0.5
μC
Marking
J619
Note 4: A line under a Lot No. identifies the indication of product
Part No. (or abbreviation code)
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29

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