2SJ619 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SJ619 Datasheet PDF : 6 Pages
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RDS (ON) − Tc
0.5
Common source
pulse test
0.4
ID = −8 V
−4
−8
0.3
−2
−2, 4
0.2 VGS = −4 V
0.1
VGS = −10
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SJ619
−30
Common source
Tc = 25°C
pulse test
−10
IDR − VDS
−5
−3
VGS = −10 V
−5
−1.0
−3
−2
−0.5
−0.3
0
−1
0, 1
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
Capacitance – VDS
5000
3000
1000
Ciss
500
300
Coss
Crss
100
50
Common source
30 VGS = 0 V
f = 1 MHz
Tc = 25°C
10
−0.1 −0.3
−1
−3
−10
−30
−100
Drain-source voltage VDS (V)
Vth − Tc
−4
Common source
VDS = −10 V
ID = −1 mA
pulse test
−3
−2
−1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD − Tc
100
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
−100
−80
−20
Common source
ID = −16 A
Tc = 25°C
pulse test
−16
VDS
−60
−12
VDD = −80 V
−40
−40
−8
−20
−20
−4
VGS
0
0
0
20
40
60
80
100
Total gate charge Qg (nC)
4
2009-09-29
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