2SJ555 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SJ555 Datasheet PDF : 8 Pages
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2SJ555
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10 V
–100
–8 V
Pulse Test
–5 V
–80
–4.5 V
–4 V
–60
–3.5 V
–40
–20
0
0
–3 V
VGS = –2.5 V
–4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
ID = –50 A
–0.4
–5 A
–20 A
–10 A
0
0
–4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–1000
–300
10 µs
–100
–30
–10
–3
–1
DC
Operation in
this area is
OPpWer=at1io0nm(Ts1c(1m=10s2s0h5oµ°Cts))
limited by RDS (on)
–0.3
Ta = 25°C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–100
–80
VDS = –10 V
Pulse Test
–60
–40
–20
0
0
Tc = 75°C
25°C
–25°C
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
VGS = –4 V
20
–10 V
10
5
2
1
–1 –3 –10 –30 –100 –300 –1000
Drain Current ID (A)
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