2SK118 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK118 Datasheet PDF : 4 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK118
Unit: mm
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−50
V
10
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VGD = −10 V, ID = 0, f = 1 MHz
NF
VDS = 15 V, VGS = 0, RG = 100 kΩ,
f = 120 Hz
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
0.3
⎯
6.5 mA
−0.4
⎯
−5.0
V
1.2
⎯
⎯
mS
⎯
8.2
⎯
pF
⎯
2.6
⎯
pF
⎯
0.5
5.0
dB
Note: IDSS classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
1
2007-11-01
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