APM9935
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
PD Maximum Power Dissipation
TA=25°C
TA=100°C
TJ Maximum Junction Temperature
TSTG
RθJA*
Storage Temperature Range
Thermal Resistance Junction to Ambient
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Rating
2.5
1.0
150
-55 to 150
50
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Param eter
Test Condition
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=-250µA
IDSS
V G S (th)
Zero Gate Voltage Drain Current
Gate Threshold Voltage
VDS=-16V , VGS=0V
VDS=VGS , IDS=-250µA
IGSS Gate Leakage Current
VGS=±12V , VDS=0V
R
D
S
(O
N
=
)
Drain-Source On-state Resistance
VSD= Diode Forward Voltage
D yn am ic>
Q g Total G ate C harge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(ON) Turn-on Delay Tim e
Tr Turn-on Rise Tim e
td(OFF) Turn-off Delay Tim e
Tf Turn-off Fall Tim e
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=-4.5V , IDS=-6A
VGS=-2.5V , IDS=-5A
IS=-2A , VGS=0V
VDS=-4V , IDS=-6A
VGS=-4.5V
VDD=-4V , IDS=-6A ,
VGEN=-4.5V , RG=10Ω
VGS=0V , VDS=-15V
F re q u e n c y=1 .0 M H z
Notes
a
:
Pulse
test
;
pulse
width
≤300µs,
duty
cycle
≤
2%
b : Guaranteed by design, not subject to production testing
APM 9935
Unit
M in. Typ. M ax.
-20
V
-1 ìA
-0.5 -0.7 -1
V
±100 nA
45
mΩ
65
-0.7 -1.3 V
17 22
4.1
nC
1.6
23 45
45 80
ns
45 90
32 55
1242
341
pF
217
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - Aug., 2003
www.anpec.com.tw