2SK2126 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SK2126 Datasheet PDF : 3 Pages
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Power F-MOS FETs
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
10 IDP
ID
t=100µs
1ms
1
10ms
DC
0.1
0.01
1
10
100
1000
Drain to source voltage VDS (V)
ID VDS
8
VGS=15V
7
10V
6
7V
6.5V
5
4
3
6V
2
1
5.5V 50W
5V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
VDS VGS
40
TC=25˚C
30
ID=10A
20
10
5A
2.5A
0
1.25A
0 5 10 15 20 25 30
Gate to source voltage VGS (V)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50
(PD=2W)
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VGS
6
VDS=25V
5
TC=0˚C 150˚C
25˚C
100˚C
4
3
2
1
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) ID
6
VGS=10V
5
4
3
TC=150˚C
100˚C
2
25˚C
1
0˚C
0
0
1
2
3
4
5
Drain current ID (A)
2SK2126
EAS Tj
120
VDD=50V
ID=5A
100
80
60
40
20
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
| Yfs | ID
6
VDS=25V
TC=25˚C
5
4
3
2
1
0
0
1
2
3
4
5
Drain current ID (A)
2
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