2SK2383 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SK2383 Datasheet PDF : 3 Pages
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Power F-MOS FETs
Area of safe operation (ASO)
100
IDP
ID
10
Non repetitive pulse
TC=25˚C
t=100µs
DC
1ms
1
10ms
100ms
0.1
0.01
1
10
100
1000
Drain to source voltage VDS (V)
ID VGS
10
VDS=25V
8
6
4
TC=150˚C
2
100˚C
0˚C
25˚C
0
01234567
Gate to source voltage VGS (V)
RDS(on) ID
1.2
VGS=10V
1.0
TC=150˚C
0.8
100˚C
0.6
25˚C
0.4
0˚C
0.2
0
0 2 4 6 8 10 12 14 16
Drain current ID (A)
PD Ta
120
(1) TC=Ta
(2) Without heat sink
100
(PD=3W)
80
(1)
60
40
20
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
| Yfs | ID
16
VDS=25V
14
TC=25˚C
12
TC=0˚C
25˚C
10
100˚C
8
150˚C
6
4
2
0
0 2 4 6 8 10 12 14 16
Drain current ID (A)
2SK2383
IAS L-load
100
TC=25˚C
30
10
170mJ
3
1
0.3
0.1
0.1
0.3
1
3
10
L-load (mH)
VDS VGS
50
TC=25˚C
40
30
20
ID=26A
10
13A
6.5A
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
10000
f=1MHz
TC=25˚C
1000
Ciss
100
Coss
Crss
10
1
0
40 80 120 160 200
Drain to source voltage VDS (V)
2
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