2SK2162 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK2162 Datasheet PDF : 3 Pages
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK2162
2SK2162
Audio-Frequency Power Amplifier Applications
• High breakdown voltage: VDSS = 180 V
• High forward transfer admittance: |Yfs| = 0.7 S (typ.)
• Complementary to 2SJ338
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
V
±20
V
1
A
20
W
150
°C
−55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-21
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