2SK2274 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

2SK2274

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII·5)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±30 V, VDS = 0 V

VDS = 640 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 2 A

VDS = 20 V, ID = 2 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD = 400 V, VGS = 10 V, ID = 5 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovered charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 5 A, VGS = 0 V

IDR = 5 A, VGS = 0 V

dIDR / dt = 100 A / µs

Marking

2SK2274

Min Typ. Max Unit

—

— ±100 nA

—

—

300 µA

700

—

—

V

1.5

—

3.5

V

—

1.5

1.7

Ω

1.0

2.5

—

S

—

610

—

—

60

—

pF

—

110

—

—

55

—

—

80

—

ns

—

65

—

—

240

—

—

44

—

—

20

—

nC

—

24

—

Min Typ. Max Unit

—

—

5

A

—

—

15

A

—

— −1.9

V

—

520

—

ns

— 10.4 —

µC

2

2002-02-06

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