2SK216 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK216

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK213, 2SK214, 2SK215, 2SK216

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK213

2SK214

2SK215

2SK216

Gate to source voltage

Drain current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VDSX

VGSS

ID

I DR

Pch

Pch*1

Tch

Tstg

Ratings

Unit

140

V

160

180

200

±15

V

500

mA

500

mA

1.75

W

30

W

150

°C

–45 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source

2SK213 V(BR)DSX 140

—

breakdown voltage 2SK214

160 —

2SK215

180 —

2SK216

200 —

Gate to source breakdown

voltag

V(BR)GSS ±15

—

Gate to source voltage

Drain to source saturation

voltage

VGS(on)

0.2

—

VDS(sat)

—

—

Forward transfer admittance |yfs|

20

40

Input capacitance

Ciss —

90

Reverse transfer capacitance Crss —

2.2

Note: 1. Pulse test

Max Unit

—

V

—

V

—

V

—

V

—

V

1.5

V

2.0

V

—

mS

—

pF

—

pF

Test conditions

ID = 1 mA, VGS = –2 V

IG = ±10 µA, VDS = 0

ID = 10 mA, VDS = 10 V *1

ID = 10 mA, VGD = 0 *1

ID = 10 mA, VDS = 20 V *1

ID = 10 mA, VDS = 10 V,

f = 1 MHz

2

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