2SK2116 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK2116

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2116, 2SK2117

Electrical Characteristics (Ta = 25°C)

Item

Drain to source 2SK2116

breakdown

voltage

2SK2117

Gate to source breakdown

voltage

Gate to source leak current

Zero gate

2SK2116

voltage drain

current

2SK2117

Gate to source cutoff voltage

Static drain to 2SK2116

source on state 2SK2117

resistance

Forward transfer admittance

Symbol Min

V(BR)DSS

450

500

V(BR)GSS

±30

I GSS

—

I DSS

—

VGS(off)

2.0

RDS(on)

—

—

|yfs|

4.0

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

3.0 V

0.6

0.8

Ω

0.7

0.9

6.5

—

S

1050 —

pF

280 —

pF

40

—

pF

15

—

ns

55

—

ns

95

—

ns

40

—

ns

0.95 —

V

320 —

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4 A, VGS = 10 V*1

ID = 4 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 4 A

VGS = 10 V

RL = 7.5 Ω

IF = 7 A, VGS = 0

IF = 7 A, VGS = 0,

diF / dt = 100 A / µs

See characteristic curve of 2SK1157, 2SK1158.

3

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