2SK216 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK216

Silicon N-Channel MOS FET

Renesas Electronics 

2SK213, 2SK214, 2SK215, 2SK216

Absolute Maximum Ratings

Item

Drain to source voltage 2SK213

2SK214

2SK215

2SK216

Gate to source voltage

Drain current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VDSX

VGSS

ID

IDR

Pch

Pch*1

Tch

Tstg

Ratings

140

160

180

200

±15

500

500

1.75

30

150

–45 to +150

(Ta = 25°C)

Unit

V

V

mA

mA

W

W

°C

°C

Electrical Characteristics

Item

Drain to source breakdown 2SK213

voltage

2SK214

2SK215

2SK216

Gate to source breakdown voltage

Gate to source voltage

Drain to source saturation voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Note: 2. Pulse test

(Ta = 25°C)

Symbol Min Typ Max Unit

Test conditions

V(BR)DSX

140

—

—

160

—

—

V ID = 1 mA, VGS = –2 V

V

180

—

—

V

200

—

—

V

V(BR)GSS

±15

—

—

V IG = ±10 µA, VDS = 0

VGS(on)

0.2

—

1.5

V ID = 10 mA, VDS = 10 V *2

VDS(sat)

—

—

2.0

V ID = 10 mA, VGD = 0 *2

|yfs|

20

40

—

mS ID = 10 mA, VDS = 20 V *2

Ciss

—

90

—

pF ID = 10 mA, VDS = 10 V,

Crss

—

2.2

—

pF f = 1 MHz

Rev.2.00 Sep 07, 2005 page 2 of 5

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